Menene Gallium Nitride?

Gallium Nitride binary III / V ne kai tsaye semiconductor wanda ya dace sosai da manyan transistors masu ƙarfin aiki da yanayin zafi mai zafi. Tun daga 1990s, an yi amfani dashi galibi a cikin diodes masu bada haske (LED). Gallium nitride yana ba da shuɗi mai haske wanda ake amfani dashi don karatun diski a cikin Blu-ray. Bugu da ƙari, ana amfani da gallium nitride a cikin na'urorin wutar lantarki, abubuwan haɗin RF, lasers, da photonics. A nan gaba, zamu ga GaN a cikin fasahar firikwensin.

A shekara ta 2006, masu inganta yanayin GaN, wasu lokuta ana kiransu GaN FETs, sun fara kerawa ne ta hanyar samar da wani karamin sifa na GaN akan layin AIN na wainar da ke amfani da sinadarin ƙarfe (MOCVD). Launin AIN yana aiki azaman buffa tsakanin matashi da GaN.
Wannan sabon aikin ya baiwa transistors na gallium nitride damar samarwa a masana'antar data kasance tana da sinadarin silicon, ta amfani da kusan matakan masana'antu iri daya. Ta amfani da sanannen tsari, wannan yana ba da damar irin wannan, ƙananan farashin masana'antu da rage shinge zuwa tallafi ga ƙananan transistors tare da ingantaccen aiki.

Don ƙarin bayani, duk kayan aikin semiconductor suna da abin da ake kira bandgap. Wannan shi ne zangon makamashi a cikin daskararren da babu wutan lantarki da zai wanzu. A sauƙaƙe, bandgap yana da alaƙa da yadda ingantaccen abu zai iya gudanar da wutar lantarki. Gallium nitride yana da bandgap 3.4 eV, idan aka kwatanta da sililin siliki na 1.12 eV. Gallium nitride ta fadi tazara mai yawa yana nufin zai iya ɗorewar ƙwanƙwasa da yanayin zafi sama da na silinon MOSFETs. Wannan faifan bandgap din yana ba da damar amfani da sinadarin gallium nitride zuwa na'urar mai karfin optoelectronic.

Ikon yin aiki a yanayin zafi da yawa da yawa fiye da transistors na gallium arsenide (GaAs) shima yana sanya gallium nitride ingantattun kayan kara karfi ga microwave da terahertz (ThZ), kamar su hotuna da hangowa, kasuwar nan gaba da aka ambata a sama. GaN fasaha tana nan kuma tayi alƙawarin inganta komai da kyau.

 


Post lokaci: Oktoba-14-2020